收藏本站
VBT3045CBP
www.vishay.com
Vishay General Semiconductor
Revision: 22-May-12
2
Document Number: 89373
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ?
40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
IF
= 5 A
= 7.5 A 0.44 -
TA
= 25 °C
= 15 A 0.49 0.57
VF
(1)
IF
= 5 A
0.30 -
0.42 -
V
IF
IF
= 7.5 A 0.33 -
TA
= 125 °C
IF
IF
= 15 A 0.39 0.48
Reverse current per diode VR
= 45 V
TA
= 25 °C
= 125 °C 17 50 mA
IR
(2)
- 2000 μA
TA
THERMAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VBT3045CBP UNIT
Typical thermal resistance
per diode
R?JC
per device 0.85
1.6
°C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-263AB VBT3045CBP-E3/4W 1.38 4W 50/tube Tube
TO-263AB VBT3045CBP-E3/8W 1.38 8W 800/reel Tape and reel
1515
20
25
30
35
DC Forward Rectifed Current (A)
0
5
10
100 120 140 160 180 200
Case Temperature (°C)
DC Forward Current at
Thermal Equilibrium
0
1
6
7
8
9
02 6 10 1618481214
Average Forward Current (A)
Average Power Loss (W)
4
D = 0.1
D = 0.2
D = 0.3
D = 0.5D = 0.8
D = 1.0
D = tp/T tp
T
3
5
2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
VBT6045CBP-E3/8W DIODE SCHOTTKY 30A 45V
VFT1045CBP-M3/4W DIODE SCHOTTKY 5A 45V
VFT2045CBP-M3/4W DIODE SCHOTTKY 10A 45V
VFT6045CBP-M3/4W DIODE SCHOTTKY 30A 45V
VI-301-DP-RC-S LCD 3.5DIGIT .35" REFL STD
VI-401-DP-RC-S LCD 7SEG 4DIG 0.35" REFL STD
VI-422-DP-FC-S LCD 4 DIGIT .5" TRANSFL
VIM-828-DP5.7-6-HV-RH-W LCD 14SEG 8DIGIT 0.35" REFL WIDE
相关代理商/技术参数
VBT3045CBP-E3-4W 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VBT3045CBP-E3-8W 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VBT3045C-E3/4W 制造商:Vishay Semiconductors 功能描述:30A,45V,TRENCH SKY RECT.
VBT3045C-E3/8W 功能描述:肖特基二极管与整流器 30A 45V DUAL TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
VBT3060C-E3/4W 制造商:Vishay Semiconductors 功能描述:30A,60V,DUAL TRENCH SKY RECT.
VBT3060C-E3/8W 制造商:Vishay Semiconductors 功能描述:30A,60V,DUAL TRENCH SKY RECT.
VBT3060G-E3/4W 制造商:Vishay Semiconductors 功能描述:30A,60V,DUAL TRENCH SKY RECT.
VBT3060G-E3/8W 制造商:Vishay Semiconductors 功能描述:30A,60V,DUAL TRENCH SKY RECT.